| No. |
Part Name |
Description |
Manufacturer |
| 9781 |
NTE573 |
Schottky Barrier Rectifier |
NTE Electronics |
| 9782 |
NTE578 |
Silicon Rectifier Schottky Barrier, General Purpose |
NTE Electronics |
| 9783 |
NTE585 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 9784 |
NTE586 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 9785 |
NTE6080 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 9786 |
NTE6081 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 9787 |
NTE6082 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 9788 |
NTE6083 |
Schottky Barrier Rectifier |
NTE Electronics |
| 9789 |
NTE6084 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
| 9790 |
NTE6087 |
Schottky Barrier Silicon Rectifier |
NTE Electronics |
| 9791 |
NTE6091 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 9792 |
NTE6092 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 9793 |
NTE6093 |
Silicon Rectifier Dual, Schottky Barrier |
NTE Electronics |
| 9794 |
NTE6094 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
| 9795 |
NTE6248 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 9796 |
NTE739 |
Integrated Circuit Dual Doubly Balanced Chroma Demodulator with RGB Matrix and Chroma Driver Stages |
NTE Electronics |
| 9797 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
| 9798 |
NTGD4169F |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 |
ON Semiconductor |
| 9799 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 9800 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 9801 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 9802 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 9803 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 9804 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 9805 |
NTHD4P02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 9806 |
NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 9807 |
NTLJD3182FZ |
Power MOSFET and Schottky Diode, −20 V, −4.0 A, uCool¿, Single P−Channel & Schottky Barrier Diode, ESD |
ON Semiconductor |
| 9808 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 9809 |
NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, µCool™ N-Channel, with 2.0 A Schottky Barrier Diode |
ON Semiconductor |
| 9810 |
NTLUF4189NZ |
Single N-Channel 30 V MOSFET plus Schottky Barrier Diode |
ON Semiconductor |
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