| No. |
Part Name |
Description |
Manufacturer |
| 9811 |
2SC1622A-T1B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 9812 |
2SC1622A-T2B |
Low-frequency high-gain amplification silicon Tr. |
NEC |
| 9813 |
2SC1940 |
Trans GP BJT NPN 120V 0.05A 3-Pin SP-8 |
New Jersey Semiconductor |
| 9814 |
2SC1947 |
Trans GP BJT NPN 17V 1A 3-Pin T-8E |
New Jersey Semiconductor |
| 9815 |
2SC2053 |
Trans GP BJT NPN 17V 0.3A 3-Pin TO-92L |
New Jersey Semiconductor |
| 9816 |
2SC2131 |
Trans GP BJT NPN 18V 0.6A 3-Pin T-8E |
New Jersey Semiconductor |
| 9817 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 9818 |
2SC2245 |
Trans GP BJT NPN 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 9819 |
2SC2298 |
HIGH GAIN AMPLIFIER |
Hitachi Semiconductor |
| 9820 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 9821 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 9822 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 9823 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 9824 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 9825 |
2SC2464 |
Trans GP BJT NPN 50V 0.1A 3-Pin MPAK |
New Jersey Semiconductor |
| 9826 |
2SC2642 |
Trans GP BJT NPN 17V 2.8A 4-Pin 2-7A1A |
New Jersey Semiconductor |
| 9827 |
2SC2690 |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 9828 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 9829 |
2SC2690A |
Use in audio and radio Frequency power amplifiers. |
NEC |
| 9830 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 9831 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 9832 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 9833 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 9834 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 9835 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 9836 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 9837 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 9838 |
2SC3022 |
Trans GP BJT NPN 17V 7A 5-Pin T-31E |
New Jersey Semiconductor |
| 9839 |
2SC313 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 9840 |
2SC313 |
Trans GP BJT NPN 160V 0.7A 3-Pin TO-126 |
New Jersey Semiconductor |
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