| No. |
Part Name |
Description |
Manufacturer |
| 9871 |
BD239A |
Pro electron power transistor |
General Electric Solid State |
| 9872 |
BD239B |
Pro electron power transistor |
General Electric Solid State |
| 9873 |
BD239C |
Pro electron power transistor |
General Electric Solid State |
| 9874 |
BD240 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 30W. |
General Electric Solid State |
| 9875 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
| 9876 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
| 9877 |
BD240C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 30W. |
General Electric Solid State |
| 9878 |
BD241 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. |
General Electric Solid State |
| 9879 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
| 9880 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 9881 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
| 9882 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 9883 |
BD241C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 40W. |
General Electric Solid State |
| 9884 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 9885 |
BD242 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 40W. |
General Electric Solid State |
| 9886 |
BD242A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 40W. |
General Electric Solid State |
| 9887 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 9888 |
BD242B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. |
General Electric Solid State |
| 9889 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 9890 |
BD242C |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. |
General Electric Solid State |
| 9891 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 9892 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
| 9893 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
| 9894 |
BD243A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 9895 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 9896 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
| 9897 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 9898 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
| 9899 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 9900 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
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