| No. |
Part Name |
Description |
Manufacturer |
| 9871 |
8050 |
NPN EPITAXIAL SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 9872 |
80610-18 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 9873 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 9874 |
8089 |
Digitally Programmed Amplifier |
White Electronic Designs |
| 9875 |
80C35 |
CMOS 8-Bit Microcontroller |
OKI electronic componets |
| 9876 |
81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 9877 |
81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 9878 |
81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 9879 |
81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
| 9880 |
81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 9881 |
81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
| 9882 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 9883 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 9884 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 9885 |
81550M |
High power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
| 9886 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 9887 |
8169 |
DIGITAL AUDIO PROCESSOR WITH MULTICHANNEL DDX�� |
ST Microelectronics |
| 9888 |
81720-20 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 9889 |
81922-18 |
Transistor for communications applications |
SGS Thomson Microelectronics |
| 9890 |
81C55 |
2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER |
OKI electronic components |
| 9891 |
81C55 |
2048-Bit CMOS STATIC RAM WITH I/O PORTS AND TIMER |
OKI electronic eomponets |
| 9892 |
82022-20 |
Common base NPN silicon power transistor for telemetry applications |
SGS Thomson Microelectronics |
| 9893 |
82023-10 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 9894 |
82023-16 |
Transistor designed specifically for Telemetry and Communications applications |
SGS Thomson Microelectronics |
| 9895 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 9896 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 9897 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 9898 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 9899 |
82324-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz |
SGS Thomson Microelectronics |
| 9900 |
82325-40 |
High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz |
SGS Thomson Microelectronics |
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