No. |
Part Name |
Description |
Manufacturer |
9901 |
TC514410ASJ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9902 |
TC514410ASJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9903 |
TC514410ASJ-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9904 |
TC514410AZ-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9905 |
TC514410AZ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9906 |
TC514410AZ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9907 |
TC514410AZ-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9908 |
TC514410J-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9909 |
TC514410J-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9910 |
TC514410Z-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9911 |
TC514410Z-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9912 |
TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM |
TOSHIBA |
9913 |
TC51832F-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9914 |
TC51832F-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9915 |
TC51832F-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9916 |
TC51832FL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9917 |
TC51832FL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9918 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9919 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9920 |
TC51832P-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9921 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9922 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9923 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9924 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9925 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9926 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9927 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9928 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9929 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9930 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
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