| No. |
Part Name |
Description |
Manufacturer |
| 991 |
SBLF1040 |
Schottky Barrier Rectifier, Forward Current 10A |
Vishay |
| 992 |
SBLF1040CT |
Dual Schottky Rectifier, Forward Current 10A |
Vishay |
| 993 |
SBLF10L25 |
Low VF Schottky Barrier Rectifier Reverse Voltage 25V Forward Current 10A |
Vishay |
| 994 |
SBLF10L30 |
Schottky Barrier Rectifier Reverse Voltage 30V Forward Current 10A |
Vishay |
| 995 |
SD1030CS-T3 |
Reverse voltage: 20.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 996 |
SD1040CS-T3 |
Reverse voltage: 20.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 997 |
SD1050CS-T3 |
Reverse voltage: 50.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 998 |
SD1060CS-T3 |
Reverse voltage: 60.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 999 |
SD1080CS-T3 |
Reverse voltage: 80.00V; 10A DPAK surface mount schottky barrier rectifier |
Won-Top Electronics |
| 1000 |
SDB10S30SMD |
Silicon Carbide Schottky Diodes - 10A diode in TO263 package |
Infineon |
| 1001 |
SDM4410 |
30V; 10A; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
| 1002 |
SDP10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package |
Infineon |
| 1003 |
SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package |
Infineon |
| 1004 |
SDT10S60 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package |
Infineon |
| 1005 |
SDT7601 |
Trans GP BJT NPN 120V 10A |
New Jersey Semiconductor |
| 1006 |
SDT7602 |
Trans GP BJT NPN 120V 10A |
New Jersey Semiconductor |
| 1007 |
SDT7603 |
Trans GP BJT NPN 120V 10A |
New Jersey Semiconductor |
| 1008 |
SDT7604 |
Trans GP BJT NPN 120V 10A |
New Jersey Semiconductor |
| 1009 |
SDT7605 |
Trans GP BJT NPN 120V 10A |
New Jersey Semiconductor |
| 1010 |
SDT7A01 |
Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 1011 |
SDT7A02 |
Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 1012 |
SDT7A03 |
Trans GP BJT NPN 150V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
| 1013 |
SDU9435A |
30V; 10A; 2.5W; N-channel enchanced mode field effect transistor |
SamHop Microelectronics Corp. |
| 1014 |
SF10B12 |
Silicon alloy-diffused junction thyristor 10A 100V |
TOSHIBA |
| 1015 |
SF10D12 |
Silicon alloy-diffused junction thyristor 10A 200V |
TOSHIBA |
| 1016 |
SF10F12 |
Silicon alloy-diffused junction thyristor 10A 300V |
TOSHIBA |
| 1017 |
SF10G12 |
Silicon alloy-diffused junction thyristor 10A 400V |
TOSHIBA |
| 1018 |
SF10J12 |
Silicon alloy-diffused junction thyristor 10A 600V |
TOSHIBA |
| 1019 |
SF10L12 |
Silicon alloy-diffused junction thyristor 10A 800V |
TOSHIBA |
| 1020 |
SF10L60 |
Super Fast Recovery Rectifiers(600V 10A) |
Shindengen |
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