| No. |
Part Name |
Description |
Manufacturer |
| 991 |
MPX4250GS |
OPERATING OVERVIEW INTEGRATED PRESSURE SENSOR 0 to 250 kPa (0 to 36.3 psi) 0.2 to 4.91 Volts Output |
Motorola |
| 992 |
MPX4250GSX |
OPERATING OVERVIEW INTEGRATED PRESSURE SENSOR 0 to 250 kPa (0 to 36.3 psi) 0.2 to 4.91 Volts Output |
Motorola |
| 993 |
MT-28 |
Case 250 Shape and dimensions package |
Silicon Transistor Corporation |
| 994 |
MTB9N25E |
TMOS POWER FET 9.0 AMPERES 250 VOLTS |
Motorola |
| 995 |
MTD3N25E |
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
| 996 |
MTD5N25E |
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM |
Motorola |
| 997 |
MTP16N25E |
TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM |
Motorola |
| 998 |
MTP3N25E |
TMOS POWER FET 3.0 AMPERES 250 VOLTS RDS(on) = 1.4 OHM |
Motorola |
| 999 |
MTP9N25 |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
Motorola |
| 1000 |
MTP9N25E |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
Motorola |
| 1001 |
MTW23N25E |
TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
Motorola |
| 1002 |
MTW32N25 |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
Motorola |
| 1003 |
MTW32N25E |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
Motorola |
| 1004 |
MTW32N25E |
Power MOSFET 32 Amps, 250 Volts |
ON Semiconductor |
| 1005 |
MTW32N25E-D |
Power MOSFET 32 Amps, 250 Volts N-Channel TO-247 |
ON Semiconductor |
| 1006 |
NBXDBA019 |
Crystal Oscillator Module, 3.3 V, 125 MHz / 250 MHz PureEdge™ LVPECL |
ON Semiconductor |
| 1007 |
NCV5504 |
Linear Voltage Regulator, LDO, 250 mA |
ON Semiconductor |
| 1008 |
NCV8508D2T50G |
5.0 V, 250 mA LDO with Watchdog and RESET |
ON Semiconductor |
| 1009 |
NCV8508DW50G |
5.0 V, 250 mA LDO with Watchdog and RESET |
ON Semiconductor |
| 1010 |
NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS |
Motorola |
| 1011 |
NOV-47 |
10 TO 250 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
| 1012 |
NTJD4001N |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 1013 |
NTJD4001NT1 |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 1014 |
NTJD4001NT1G |
Small Signal MOSFET 30 V, 250 mA, Dual N - Channel, SC - 88 |
ON Semiconductor |
| 1015 |
P4KE250C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1016 |
P4KE250CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1017 |
P6KE250C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1018 |
P6KE250CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1019 |
PBHV9050Z |
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor |
Nexperia |
| 1020 |
PBHV9050Z |
500 V, 250 mA PNP high-voltage low V_CEsat (BISS) transistor |
NXP Semiconductors |
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