No. |
Part Name |
Description |
Manufacturer |
991 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
992 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
993 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
994 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
995 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
996 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
997 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
998 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
999 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1000 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1001 |
2N6518 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1002 |
2N6518BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1003 |
2N6518TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1004 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1005 |
2N6519 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1006 |
2N6519BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1007 |
2N6519TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1008 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
1009 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1010 |
2N6520BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1011 |
2N6520TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
1012 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1013 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1014 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1015 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1016 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1017 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
1018 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
1019 |
2N6714 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
1020 |
2N6715 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
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