| No. |
Part Name |
Description |
Manufacturer |
| 991 |
1T379 |
Silicon Variable Capacitance Diode for Electronic |
SONY |
| 992 |
1X |
Marking for NE68035 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
| 993 |
1ZB200-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 994 |
1ZB200-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 995 |
1ZB220-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 996 |
1ZB220-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 997 |
1ZB240-Y |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 998 |
1ZB240-Z |
Zener diode for constant voltage regulation and transient suppressors applications |
TOSHIBA |
| 999 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
| 1000 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
| 1001 |
2-AA118 |
HF Germanium tip diode pair for phase discriminator circuits |
TUNGSRAM |
| 1002 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
| 1003 |
2-OA1172 |
HF germanium pair diode for discriminator and radio detector circuits |
TUNGSRAM |
| 1004 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1005 |
2002A |
Marking for NE73432 part number, 32 NEC (TO-92) package |
NEC |
| 1006 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1007 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1008 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1009 |
2021-1G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 1010 |
2021G |
480mA 10V led backlight for LCD display |
Micro Electronics |
| 1011 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1012 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1013 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1014 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 1015 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 1016 |
2043G |
LED BACKLIGHT FOR LCD DISPLAY |
Micro Electronics |
| 1017 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 1018 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 1019 |
20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
Motorola |
| 1020 |
20PMT03 |
10/100 Base TX Transformer Designed for general Chipsets |
YCL |
| | | |
