| No. |
Part Name |
Description |
Manufacturer |
| 991 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 992 |
2SC815 |
LOW FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLAR |
USHA India LTD |
| 993 |
2SC828 |
Audio Frequency Small Signal Transistors |
Semiconductor Technology |
| 994 |
2SC863 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 995 |
2SC864 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 996 |
2SC900 |
LOW FREQUENCY, LOW NOISE AMPLIFIER |
USHA India LTD |
| 997 |
2SC941 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 998 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 999 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1000 |
2SC941TM |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1001 |
2SC942 |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 1002 |
2SC942TM |
NPN EPITAXIAL TYPE (HIGH/ AM/ AM HIGH FREQUENCY AMPLIFIER CONVERTER APPLICATIONS) |
TOSHIBA |
| 1003 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1004 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 1005 |
2SC982 |
Silicon NPN epitaxial planar transistor, Printer Drive, Core Drive and LED drive, low frequency amplifier applications |
TOSHIBA |
| 1006 |
2SC982 |
NPN EPITAXIAL TYPE (PRINTER DRIVE/ CORE DRIVER AND LED DRIVE/ LOW FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1007 |
2SC982TM |
Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington) Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications |
TOSHIBA |
| 1008 |
2SC983 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1009 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1010 |
2SC991 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1011 |
2SC992 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1012 |
2SC995 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1013 |
2SC996 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1014 |
2SC997 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1015 |
2SD100 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1016 |
2SD100A |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1017 |
2SD101 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1018 |
2SD104 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1019 |
2SD105 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1020 |
2SD1052 |
Silicon NPN triple diffused audio frequency power transistor |
TOSHIBA |
| | | |
