| No. |
Part Name |
Description |
Manufacturer |
| 991 |
IDT72V231L10PFI |
3.3 VOLT CMOS SyncFIFO�� 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 |
IDT |
| 992 |
IDT72V231L15 |
3.3 VOLT CMOS SyncFIFO�� 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 |
IDT |
| 993 |
IDT72V231L15J |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 994 |
IDT72V231L15J8 |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 995 |
IDT72V231L15JI |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 996 |
IDT72V231L15JI8 |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 997 |
IDT72V231L15PF |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 998 |
IDT72V231L15PF8 |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 999 |
IDT72V231L15PFI |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 1000 |
IDT72V231L15PFI8 |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 1001 |
IDT72V231L20 |
3.3 VOLT CMOS SyncFIFO�� 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 |
IDT |
| 1002 |
IDT72V231L20J |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 1003 |
IDT72V231L20J8 |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 1004 |
IDT72V231L20JI |
3.3 VOLT CMOS SyncFIFO�� 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 |
IDT |
| 1005 |
IDT72V231L20PF |
2K x 9 SyncFIFO, 3.3V |
IDT |
| 1006 |
IDT72V231L20PFI |
3.3 VOLT CMOS SyncFIFO�� 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 |
IDT |
| 1007 |
INA231 |
High- or Low-Side Measurement, Bidirectional CURRENT/POWER MONITOR with I2C� Int |
Texas Instruments |
| 1008 |
INA231AIYFFR |
28-V, Bi-Directional, Zero-Drift, Low-/High-Side, I2C Out Current/Power Monitor w/ Alert in WCSP 12-DSBGA -40 to 125 |
Texas Instruments |
| 1009 |
INA231AIYFFT |
28-V, Bi-Directional, Zero-Drift, Low-/High-Side, I2C Out Current/Power Monitor w/ Alert in WCSP 12-DSBGA -40 to 125 |
Texas Instruments |
| 1010 |
IRF231 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 1011 |
IRF231 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 1012 |
IRF231 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 1013 |
IRF231 |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1014 |
IRF231 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 1015 |
IRF231 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 1016 |
IRF231R |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 1017 |
IRF9231 |
5.5A and -6.5A/ -150V and -200V/ 0.8 and 1.2 Ohm/ P-Channel Power MOSFETs |
Intersil |
| 1018 |
IRF9231 |
HEXFET POWER MOSFETS |
New Jersey Semiconductor |
| 1019 |
IRF9231 |
150 V, P-channel power MOSFET |
Samsung Electronic |
| 1020 |
IRF9231 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 6.5A |
Siliconix |
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