No. |
Part Name |
Description |
Manufacturer |
991 |
ER5911-J |
1K (128 X 8 OR 64 X 16) SERIAL ELECTRICALLY ERASABLE PROM |
Microchip |
992 |
ER5911-P |
1K (128 X 8 OR 64 X 16) SERIAL ELECTRICALLY ERASABLE PROM |
Microchip |
993 |
GE3009 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
994 |
GE3010 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
995 |
GE3011 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
996 |
GE3012 |
Photon coupled isolator. GaAs infrared emitting diode & light activated triac driver. |
General Electric Solid State |
997 |
GE3020 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
998 |
GE3021 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
999 |
GE3022 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
1000 |
GE3023 |
PHOTO COUPLED ISOLATOR |
General Electric Solid State |
1001 |
GE5062 |
NPN Power Darlington Transistors |
General Electric Solid State |
1002 |
GEPS2001 |
Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. |
General Electric Solid State |
1003 |
GES2218 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
1004 |
GES2218A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
1005 |
GES2219 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
1006 |
GES2219A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
1007 |
GES2221 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
1008 |
GES2221A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
1009 |
GES2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
1010 |
GES2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
1011 |
GES2646 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
1012 |
GES2647 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
1013 |
GES2904 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
1014 |
GES2904A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
1015 |
GES2905 |
Planar epitaxial PNP silicon transistor. 40V, 600mA. |
General Electric Solid State |
1016 |
GES2905A |
Planar epitaxial PNP silicon transistor. 60V, 600mA. |
General Electric Solid State |
1017 |
GES2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1018 |
GES2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1019 |
GES2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
1020 |
GES2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
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