| No. |
Part Name |
Description |
Manufacturer |
| 991 |
IXTU01N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 992 |
IXTU01N80 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 993 |
IXTV26N50P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 994 |
IXTV26N50PS |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 995 |
IXTX24N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 996 |
IXTY01N100 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 997 |
IXTY01N80 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 998 |
IXTY1N80 |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
| 999 |
J111 |
High Speed N-Channel JFET Switch |
Linear Systems |
| 1000 |
J112 |
High Speed N-Channel JFET Switch |
Linear Systems |
| 1001 |
J113 |
High Speed N-Channel JFET Switch |
Linear Systems |
| 1002 |
JANTX2N7334 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 1003 |
JANTXV2N7334 |
100V Quad N-Channel MOSFET in a MO-036AB package |
International Rectifier |
| 1004 |
JV2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 1005 |
JV2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 1006 |
JX2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 1007 |
JX2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 1008 |
K7M161825A-QC(I)65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1009 |
K7M161825A-QC(I)65/75 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1010 |
K7M161825A-QC(I)75 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1011 |
K7M161835B-QC65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1012 |
K7M161835B-QCI65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1013 |
K7M163625A-QC(I)65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1014 |
K7M163625A-QC(I)75 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1015 |
K7M163635B-QC65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1016 |
K7M163635B-QCI65 |
512Kx36 & 1Mx18 Pipelined NtRAM |
Samsung Electronic |
| 1017 |
K7M321825M-QC75 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
| 1018 |
K7M323625M-QC75 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM |
Samsung Electronic |
| 1019 |
K7M801825B-QC65 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
| 1020 |
K7M801825B-QC75 |
256Kx36 & 512Kx18-Bit Pipelined NtRAM |
Samsung Electronic |
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