| No. |
Part Name |
Description |
Manufacturer |
| 991 |
MP91 |
P-Channel Enhancement-Type insulated-gate field-effect transistor |
Texas Instruments |
| 992 |
MP92 |
P-Channel Enhancement-Type insulated-gate Field-Effect transistor |
Texas Instruments |
| 993 |
MP93 |
P-Channel Enhancement-Type insulated-gate Field-Effect transistor |
Texas Instruments |
| 994 |
MP94 |
Dual P-Channel Enhancement-Type insulated-gate Field-Effect transistor |
Texas Instruments |
| 995 |
MPF102 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 996 |
MPF108 |
Symmetrical Silicon N-Channel Junction Field-Effect transistor, designed for VHF amplifier and mixer applications |
Motorola |
| 997 |
MPF109 |
Symmetrical Silicon N-Channel Junction Field-Effect transistor |
Motorola |
| 998 |
MPF111 |
N-Channel Junction Field-Effect Transistor |
Motorola |
| 999 |
MPF112 |
N-Channel Junction Field-Effect Transistor |
Motorola |
| 1000 |
MPF161 |
P-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 1001 |
MPF4391 |
N-Channel Junction Field-Effect Transistor |
Motorola |
| 1002 |
MPF970 |
P-Channel Junction Field-Effect Transistor |
Motorola |
| 1003 |
MPF971 |
P-Channel Junction Field-Effect Transistor |
Motorola |
| 1004 |
MRF136Y |
RF power field-effect transistor |
Motorola |
| 1005 |
MRF137 |
RF POWER FIELD-EFFECT TRANSISTOR |
Advanced Semiconductor |
| 1006 |
MRF138 |
N-Channel Enhancement-mode TMOS RF power field-effect transistor 30W 2.0-175MHz |
Motorola |
| 1007 |
MRF175LU |
100 W, 28 V,RF power field-effect transistor |
MA-Com |
| 1008 |
MRF175LV |
100 W, 28 V,RF power field-effect transistor |
MA-Com |
| 1009 |
MRF186 |
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
Motorola |
| 1010 |
MRF255PHOTOMASTER |
RF power field-effect transistor |
Motorola |
| 1011 |
MRF255PHT |
RF Power Field-Effect Transistor |
Motorola |
| 1012 |
MRF284S |
RF Power Field-Effect Transistors |
Motorola |
| 1013 |
MRF966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
| 1014 |
MRFC966 |
N-Channel Dual-Gate GaAs Field-Effect Transistor |
Motorola |
| 1015 |
NE33284A-T1B |
N-channel heterojunction field-effect transistor |
NEC |
| 1016 |
P1086 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 1017 |
P1087 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
| 1018 |
PH1955L |
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. |
Philips |
| 1019 |
PH2920 |
N-channel enhancement mode field-effect transistor |
Philips |
| 1020 |
PH3230 |
N-channel enhancement mode field-effect transistor |
Philips |
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