| No. |
Part Name |
Description |
Manufacturer |
| 991 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 992 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 993 |
1S80 |
Germanium Point Contact Diode, intended for use as a General Detector |
Hitachi Semiconductor |
| 994 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 995 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 996 |
1SV234 |
PIN Diode, 50V, 50mA, rs=5 Ohm(typ), Dual CP |
ON Semiconductor |
| 997 |
20SI05R |
20A 50V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 998 |
20SI10R |
20A 1000V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 999 |
20SI12R |
20A 1200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1000 |
20SI15R |
20A 1500V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1001 |
20SI1R |
20A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1002 |
20SI2R |
20A 200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1003 |
20SI3R |
20A 300V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1004 |
20SI4R |
20A 400V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1005 |
20SI5R |
20A 500V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1006 |
20SI6R |
20A 600V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1007 |
20SI8R |
20A 800V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 1008 |
28F008B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
| 1009 |
28F016B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
| 1010 |
2XAA119 |
Germanium diode, ratio detectors-discriminators |
SESCOSEM |
| 1011 |
39NQ52A |
Subminiature microwave detection diode, color white |
Tesla Elektronicke |
| 1012 |
39NQ52B |
Subminiature microwave detection diode, color albastru |
Tesla Elektronicke |
| 1013 |
39NQ52C |
Subminiature microwave detection diode, color red |
Tesla Elektronicke |
| 1014 |
5451 |
Dual 2-Wide, 2-Input AOI Gate |
Fairchild Semiconductor |
| 1015 |
5453 |
Expandable 4-Wide, 2-Input AOI Gate |
Fairchild Semiconductor |
| 1016 |
5454 |
4-Wide, 2-Input AND-OR-INVERT Gate |
Fairchild Semiconductor |
| 1017 |
54H51 |
Dual 2-Wide, 2-Input AOI Gate |
Fairchild Semiconductor |
| 1018 |
54H54 |
4-Wide, 2-Input AND-OR-INVERT Gate |
Fairchild Semiconductor |
| 1019 |
54LS160 |
Synchronous 4-Bit counters (decade, direct clear) |
IPRS Baneasa |
| 1020 |
54LS51 |
Dual 2-Wide, 2-Input/3-Input AOI Gate |
Fairchild Semiconductor |
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