| No. |
Part Name |
Description |
Manufacturer |
| 991 |
IDT74CBTLV16800PV |
Low-Voltage 20-Bit Bus Switch with Precharged Outputs |
IDT |
| 992 |
IDT74CBTLV16800PV8 |
Low-Voltage 20-Bit Bus Switch with Precharged Outputs |
IDT |
| 993 |
IMT200-300-10 |
Input voltage 200-300-400 VDC;output voltage 10 VDC;output current:20 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 994 |
IMT200-300-12 |
Input voltage 200-300-400 VDC;output voltage 12 VDC;output current:17 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 995 |
IMT200-300-15 |
Input voltage 200-300-400 VDC;output voltage 15 VDC;output current:10 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 996 |
IMT200-300-3.3 |
Input voltage 200-300-400 VDC;output voltage 3.3 VDC;output current:50 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 997 |
IMT200-300-5 |
Input voltage 200-300-400 VDC;output voltage 5 VDC;output current:40 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 998 |
IMT400-300-12 |
Input voltage 200-300-400 VDC;output voltage 12 VDC;output current:40 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 999 |
IMT400-300-15 |
Input voltage 200-300-400 VDC;output voltage 15 VDC;output current:30 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 1000 |
IMT400-300-24 |
Input voltage 200-300-400 VDC;output voltage 24 VDC;output current:20 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 1001 |
IMT400-300-3.3 |
Input voltage 200-300-400 VDC;output voltage 3.3 VDC;output current:100 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 1002 |
IMT400-300-5 |
Input voltage 200-300-400 VDC;output voltage 5 VDC;output current:80 mA; 200-480 W full brick DC to DC converter |
FranMar International |
| 1003 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 1004 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 1005 |
IRF230 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 1006 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 1007 |
IRF250 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 1008 |
IRF252 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. |
General Electric Solid State |
| 1009 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 1010 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 1011 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 1012 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 1013 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 1014 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 1015 |
IRF8910G |
Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1016 |
IRF8910GPBF |
Halogen Free and Lead Free 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 1017 |
IS22C022 |
VERSATILE 20 SEC INSTANT VOICE ROM |
Integrated Silicon Solution Inc |
| 1018 |
IS22C022P |
VERSATILE 20 SEC INSTANT VOICE ROM |
Integrated Silicon Solution Inc |
| 1019 |
IS22C022X |
VERSATILE 20 SEC INSTANT VOICE ROM |
Integrated Silicon Solution Inc |
| 1020 |
ISD1020AG |
Single-chip voice record/playback device 20-second durations |
Information Storage Devices |
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