| No. |
Part Name |
Description |
Manufacturer |
| 991 |
STA8089FG |
Fully Integrated GPS/Galileo/Glonass/Beidou2/QZSS Receiver with embedded RF and in-package Flash |
ST Microelectronics |
| 992 |
STA8089FGTR |
Fully Integrated GPS/Galileo/Glonass/Beidou2/QZSS Receiver with embedded RF and in-package Flash |
ST Microelectronics |
| 993 |
STA8090FG |
Fully Integrated GPS/Galileo/Glonass/Beidou2/QZSS Receiver with embedded RF and in-package Flash |
ST Microelectronics |
| 994 |
STGAP1S |
gapDRIVE: galvanically isolated single gate driver |
ST Microelectronics |
| 995 |
STGAP1STR |
gapDRIVE: galvanically isolated single gate driver |
ST Microelectronics |
| 996 |
TBA990 |
SYNCHRONOUS DEMODULATOR for galvanic control of an RGB circuit (TBA 530) in conjunction with RGB power amplifiers |
VALVO |
| 997 |
TIL113 |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor |
Texas Instruments |
| 998 |
TIL119 |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor |
Texas Instruments |
| 999 |
TIL119A |
Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon NPN Darlinrton-Connected Phototransistor |
Texas Instruments |
| 1000 |
TIL191 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1001 |
TIL191A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1002 |
TIL191B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1003 |
TIL192 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1004 |
TIL192A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1005 |
TIL192B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1006 |
TIL193 |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1007 |
TIL193A |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1008 |
TIL193B |
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel |
Texas Instruments |
| 1009 |
TIL318 |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 1010 |
TIL31B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 1011 |
TIL33B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 1012 |
TIL34B |
P-N GALLIUM ARSENIDE INFRARED-EMITTING DIODES |
Texas Instruments |
| 1013 |
TJA1052IT |
Galvanically isolated high-speed CAN transceiver |
NXP Semiconductors |
| 1014 |
TJF1052IT |
Galvanically isolated high-speed CAN transceiver |
NXP Semiconductors |
| 1015 |
TOX9000 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 1016 |
TOX9002 |
1 V, gallium aluminum arsenide light emitting diode |
Texas Instruments |
| 1017 |
TOX9004 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 1018 |
TOX9005 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
| 1019 |
TOX9006 |
3 V, gallium aluminum arsenide infrared-emitting diode |
Texas Instruments |
| 1020 |
TOX9007 |
2 V, P-N gallium arsenide infrared-emitting diode |
Texas Instruments |
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