| No. |
Part Name |
Description |
Manufacturer |
| 991 |
2SC708A |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
| 992 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 993 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 994 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 995 |
2SC730 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 996 |
2SC741 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 997 |
2SC830 |
Silicon NPN Triple Diffused Transistor, intended for use in HiFi Amp. Power Output |
Hitachi Semiconductor |
| 998 |
2SC830H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Output, Medium Power Switching |
Hitachi Semiconductor |
| 999 |
2SC856 |
Silicon NPN Triple Diffused LTP Transistor, intended for use in Video Power Output |
Hitachi Semiconductor |
| 1000 |
2SC857H |
Silicon NPN Triple Diffused LTP Transistor, intended for use in High Voltage Switching |
Hitachi Semiconductor |
| 1001 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 1002 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 1003 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 1004 |
2SC898 |
Silicon NPN Triple Diffused Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 1005 |
2SC89H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1006 |
2SC907AH |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 1007 |
2SC907H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier and Medium Speed Switching |
Hitachi Semiconductor |
| 1008 |
2SC908 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 1009 |
2SC908 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 1010 |
2SC90H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1011 |
2SC917 |
Silicon NPN Planar Transistor, intended for use in TV Video IF Final Stage |
Hitachi Semiconductor |
| 1012 |
2SC91H |
Germanium NPN Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 1013 |
2SC935 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Stabilized Power Supply |
Hitachi Semiconductor |
| 1014 |
2SC936 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Vertical Deflection Output |
Hitachi Semiconductor |
| 1015 |
2SC937 |
Silicon NPN Triple Diffused Transistor, JEDEC TO-3, intended for use in Transless TV Horizontal Deflection Output |
Hitachi Semiconductor |
| 1016 |
2SC984 |
Silicon NPN Epitaxial Planar Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 1017 |
2SC984 |
Silicon NPN Epitaxial Planar Transistor, intended for use in Hi Fi Power Output |
Hitachi Semiconductor |
| 1018 |
2SC984H |
Silicon NPN Epitaxial LTP transistor, intended for use in Medium Speed Switching and Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 1019 |
2SD1101 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1020 |
2SD1101 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| | | |
