No. |
Part Name |
Description |
Manufacturer |
991 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
992 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
993 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
994 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
995 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
996 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
997 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
998 |
C62702-C747 |
NPN Silicon AF Transistor (High current gain High collector current) |
Siemens |
999 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
1000 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
1001 |
C62702-C853 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
1002 |
C62702-C854 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
1003 |
C62702-C855 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
1004 |
C62702-C941 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
1005 |
C62702-C942 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
1006 |
C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
1007 |
CA3082 |
General-Purpose High-Current NPN transistor Arrays (common collector array) |
RCA Solid State |
1008 |
CA3082F |
General-Purpose High-Current NPN transistor Arrays (common collector array) |
RCA Solid State |
1009 |
CA3250E |
General-purpose high-current N-P-N transistor array. Common-collector array. |
General Electric Solid State |
1010 |
CA3250F |
General-purpose high-current N-P-N transistor array. Common-collector array. |
General Electric Solid State |
1011 |
CA3250H |
General-purpose high-current N-P-N transistor array. Common-collector array. |
General Electric Solid State |
1012 |
CDB403E |
Quadruple 2-Input NAND Gates with open-collector outputs |
IPRS Baneasa |
1013 |
CDB403E |
Quadruple 2-Input NAND gates with open-collector outputs |
IPRS Baneasa |
1014 |
CDB403E |
Quad two input NAND gate, open collector (5.5V), pinout |
IPRS Baneasa |
1015 |
CDB403E |
QUADRUPLE 2-INPUT NAND GATE WITH OPEN COLLECTOR OUTPUT (5.5V) |
IPRS Baneasa |
1016 |
CDB403EM |
Quadruple 2-Input NAND Gates with open-collector outputs |
IPRS Baneasa |
1017 |
CDB403EM |
Quadruple 2-Input NAND gates with open-collector outputs |
IPRS Baneasa |
1018 |
CDB403EM |
Quad two input NAND gate, open collector (5.5V), pinout |
IPRS Baneasa |
1019 |
CDB405E |
Hex inverters with open-collector outputs |
IPRS Baneasa |
1020 |
CDB405E |
HEX INVERTERS with open-collector outputs |
IPRS Baneasa |
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