| No. |
Part Name |
Description |
Manufacturer |
| 991 |
AH102A-G |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 992 |
AH102A-PCB2000 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 993 |
AH102A-PCB900 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 994 |
AH1807 |
MEDIUM SENSITIVITY MICROPOWER OMNIPOLAR HALL EFFECT SWITCH |
Diodes |
| 995 |
AH1807-P-A |
MEDIUM SENSITIVITY MICROPOWER OMNIPOLAR HALL EFFECT SWITCH |
Diodes |
| 996 |
AH1807-P-B |
MEDIUM SENSITIVITY MICROPOWER OMNIPOLAR HALL EFFECT SWITCH |
Diodes |
| 997 |
AH1807-W-7 |
MEDIUM SENSITIVITY MICROPOWER OMNIPOLAR HALL EFFECT SWITCH |
Diodes |
| 998 |
AH1807-Z-7 |
MEDIUM SENSITIVITY MICROPOWER OMNIPOLAR HALL EFFECT SWITCH |
Diodes |
| 999 |
AH1895 |
MEDIUM SENSITIVITY MICROPOWER OMNIPLOAR HALL-EFFECT SWITCH |
Diodes |
| 1000 |
AH1895-FA-7 |
MEDIUM SENSITIVITY MICROPOWER OMNIPLOAR HALL-EFFECT SWITCH |
Diodes |
| 1001 |
AH1895-Z-7 |
MEDIUM SENSITIVITY MICROPOWER OMNIPLOAR HALL-EFFECT SWITCH |
Diodes |
| 1002 |
AH201 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1003 |
AH201-PCB-1900 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1004 |
AH201-PCB-900 |
Medium Power, High Linearity Amplifier |
WJ Communications |
| 1005 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1006 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1007 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1008 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1009 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1010 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1011 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1012 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1013 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 1014 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 1015 |
AN1541 |
A MEDIUM POWER AMPLIFIER AT 1.8GHZ USING THE NPN SI START499 TRANSISTOR |
SGS Thomson Microelectronics |
| 1016 |
AT-11571 |
2-8 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 1017 |
AT-11671 |
2-10 GHz Medium Power Gallium Arsenide FET |
AVANTEK |
| 1018 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 1019 |
AT-31625-BLK |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 1020 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
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