| No. |
Part Name |
Description |
Manufacturer |
| 991 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 992 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 993 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 994 |
2SK1529 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 995 |
2SK1530 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 996 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 997 |
2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 998 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 999 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 1000 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1001 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 1002 |
2SK2795 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 1003 |
2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 1004 |
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER |
TOSHIBA |
| 1005 |
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER |
TOSHIBA |
| 1006 |
2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier |
Renesas |
| 1007 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 1008 |
2SK410 |
Silicon N-Channel MOS FET (HF/VHF power amplifier) |
Hitachi Semiconductor |
| 1009 |
2SK511 |
HIGH FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1010 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 1011 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
| 1012 |
3718 |
LOW-VOLTAGE AUDIO POWER AMPLIFIER |
Allegro MicroSystems |
| 1013 |
40250 |
Silicon HOMETAXIAL NPN transistor, AF power amplifier |
SGS-ATES |
| 1014 |
40251 |
Silicon HOMETAXIAL NPN transistor, AF power amplifier |
SGS-ATES |
| 1015 |
40636 |
Silicon HOMETAXIAL NPN transistor, HI-FI power amplifier |
SGS-ATES |
| 1016 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
| 1017 |
472911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 1018 |
482911183-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
| 1019 |
500-30-100-35-E3 |
RF POWER AMPLIFIER MODULE |
etc |
| 1020 |
53209 |
SPDT SOLID-STATE RELAYS High Power AC/DC Switching |
Micropac Industries |
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