| No. |
Part Name |
Description |
Manufacturer |
| 991 |
IXSH30N60AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 992 |
IXSH30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 993 |
IXSH30N60U1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 994 |
IXSH50N60B |
Short Circuit SOA Capability |
IXYS Corporation |
| 995 |
IXSK30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 996 |
IXSP15N120B |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 997 |
IXST15N120BD1 |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 998 |
IXST30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 999 |
KCQ20A04 |
Similar to TO-247C(TO-3P)Case, Low Forward Voltage Drop, High Surge Current Capability |
Nihon |
| 1000 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
| 1001 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
| 1002 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 1003 |
KM416C256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
| 1004 |
KM416C256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
| 1005 |
KM416C256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 1006 |
KM416V256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 1007 |
KM416V256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 1008 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 1009 |
KM416V256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 1010 |
KM416V256DLT-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 1011 |
KM416V256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 1012 |
KSQ60A03LB |
Low Forward Voltage Drop Low Power Loss, High Efficiency, High Surge Current Capability |
Nihon |
| 1013 |
KT940 |
TPAH3HCTOPBL KPEMHNEBBLE ME3ANNAHAPABLE CTPYKTYPBL N-P-N YCNNNTENBHBLE |
etc |
| 1014 |
L3234 |
HIGLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
SGS Thomson Microelectronics |
| 1015 |
L3234 |
HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
SGS Thomson Microelectronics |
| 1016 |
L3234 |
HIGLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
ST Microelectronics |
| 1017 |
L3234B |
HIGLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
ST Microelectronics |
| 1018 |
L3235 |
HIGLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
SGS Thomson Microelectronics |
| 1019 |
L3235 |
HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
SGS Thomson Microelectronics |
| 1020 |
L3235 |
HIGLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS |
ST Microelectronics |
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