| No. |
Part Name |
Description |
Manufacturer |
| 991 |
ST733C04LHK1L |
Inverter grade thyristor |
International Rectifier |
| 992 |
ST733C04LHK2 |
Inverter grade thyristor |
International Rectifier |
| 993 |
ST733C04LHK2L |
Inverter grade thyristor |
International Rectifier |
| 994 |
ST733C04LHK3 |
Inverter grade thyristor |
International Rectifier |
| 995 |
ST733C04LHK3L |
Inverter grade thyristor |
International Rectifier |
| 996 |
ST733C08LHK0 |
Inverter grade thyristor |
International Rectifier |
| 997 |
ST733C08LHK0L |
Inverter grade thyristor |
International Rectifier |
| 998 |
ST733C08LHK1 |
Inverter grade thyristor |
International Rectifier |
| 999 |
ST733C08LHK1L |
Inverter grade thyristor |
International Rectifier |
| 1000 |
ST733C08LHK2 |
Inverter grade thyristor |
International Rectifier |
| 1001 |
ST733C08LHK2L |
Inverter grade thyristor |
International Rectifier |
| 1002 |
ST733C08LHK3 |
Inverter grade thyristor |
International Rectifier |
| 1003 |
ST733C08LHK3L |
Inverter grade thyristor |
International Rectifier |
| 1004 |
STA8088GA |
Automotive Grade GPS/Galileo/Glonass/QZSS receiver |
ST Microelectronics |
| 1005 |
STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
| 1006 |
STB36NM60N |
Automotive-grade N-channel 600 V, 0.092 Ohm typ., 29 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 1007 |
STB36NM60ND |
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 1008 |
STB46N30M5 |
Automotive-grade N-channel 300 V, 0.037 Ohm typ., 53 A MDmesh(TM) V Power MOSFET in a D2PAK Package |
ST Microelectronics |
| 1009 |
STB9NK80Z |
Automotive-grade N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 1010 |
STD10NF30 |
Automotive-grade N-channel 300 V, 0.28 Ohm typ., 10 A MESH OVERLAY(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 1011 |
STD80N4F6 |
Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 1012 |
STD80N6F6 |
Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a DPAK package |
ST Microelectronics |
| 1013 |
STGB20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 1014 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 1015 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 1016 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 1017 |
STGD10HF60KD |
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode |
ST Microelectronics |
| 1018 |
STGD19N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ |
ST Microelectronics |
| 1019 |
STGD20N40LZ |
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ |
ST Microelectronics |
| 1020 |
STGP35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| | | |
