No. |
Part Name |
Description |
Manufacturer |
991 |
2N4058 |
PNP Silicon Transistor |
Texas Instruments |
992 |
2N4059 |
PNP Silicon Transistor |
Texas Instruments |
993 |
2N4060 |
PNP Silicon Transistor |
Texas Instruments |
994 |
2N4061 |
PNP Silicon Transistor |
Texas Instruments |
995 |
2N4062 |
PNP Silicon Transistor |
Texas Instruments |
996 |
2N4070 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
997 |
2N4071 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
998 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
999 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
1000 |
2N4075 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1001 |
2N4076 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1002 |
2N4104 |
NPN Silicon Transistor |
Texas Instruments |
1003 |
2N4115 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1004 |
2N4116 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
1005 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
1006 |
2N4123 |
NPN silicon transistor |
Motorola |
1007 |
2N4123 |
NPN Silicon Transistor |
NEC |
1008 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1009 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
1010 |
2N4124 |
NPN silicon transistor |
Motorola |
1011 |
2N4124 |
NPN Silicon Transistor |
NEC |
1012 |
2N4124 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1013 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
1014 |
2N4125 |
PNP silicon transistor |
Motorola |
1015 |
2N4125 |
PNP Silicon Transistor |
NEC |
1016 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1017 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
1018 |
2N4126 |
PNP silicon transistor |
Motorola |
1019 |
2N4126 |
PNP Silicon Transistor |
NEC |
1020 |
2N4126 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
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