| No. |
Part Name |
Description |
Manufacturer |
| 991 |
BDW22A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 992 |
BDW22B |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 993 |
BDW22B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 994 |
BDW22C |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 995 |
BDW22C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 996 |
BDW23 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 997 |
BDW23 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 998 |
BDW23A |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 999 |
BDW23A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1000 |
BDW23B |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1001 |
BDW23B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1002 |
BDW23C |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1003 |
BDW23C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1004 |
BDW24 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1005 |
BDW24 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1006 |
BDW24A |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1007 |
BDW24A |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1008 |
BDW24B |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1009 |
BDW24B |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1010 |
BDW24C |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1011 |
BDW24C |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1012 |
BDW51 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1013 |
BDW51 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1014 |
BDW51A |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1015 |
BDW51A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1016 |
BDW51B |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1017 |
BDW51B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1018 |
BDW51C |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1019 |
BDW51C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1020 |
BDW52 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
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