| No. |
Part Name |
Description |
Manufacturer |
| 991 |
LFX200B-4F900C |
The ispXPGA architecture |
Lattice Semiconductor |
| 992 |
LFX200B-4F900I |
The ispXPGA architecture |
Lattice Semiconductor |
| 993 |
LFX200C-3F900C |
The ispXPGA architecture |
Lattice Semiconductor |
| 994 |
LFX200C-3F900I |
The ispXPGA architecture |
Lattice Semiconductor |
| 995 |
LFX200C-3F900I |
The ispXPGA architecture |
Lattice Semiconductor |
| 996 |
LFX200C-4F900C |
The ispXPGA architecture |
Lattice Semiconductor |
| 997 |
LFX200C-4F900I |
The ispXPGA architecture |
Lattice Semiconductor |
| 998 |
LM8364BALMFX20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 999 |
LM8364BALMFX20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 1000 |
LMX2531LQX2080E/NOPB |
High Performance Frequency Synthesizer System with Integrated VCO 36-WQFN -40 to 85 |
Texas Instruments |
| 1001 |
LSX201 |
General Purpose SOT-23 Schottkys |
Microsemi |
| 1002 |
MA3X200E |
Silicon epitaxial planer type |
Panasonic |
| 1003 |
MA3X200F |
Silicon epitaxial planar type |
Panasonic |
| 1004 |
MAX20-100.0C |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1005 |
MAX20-100.0CA |
100.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1006 |
MAX20-110.0C |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1007 |
MAX20-110.0CA |
110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1008 |
MAX20-120.0C |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1009 |
MAX20-120.0CA |
120.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1010 |
MAX20-130.0C |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1011 |
MAX20-130.0CA |
130.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1012 |
MAX20-150.0C |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1013 |
MAX20-150.0CA |
150.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 1014 |
MAX200 |
+5V RS-232 Transceivers with 0.1µF External Capacitors. Maxim has incorporated many new features into the RS-232 components that provide engineering value. |
MAXIM - Dallas Semiconductor |
| 1015 |
MAX20002 |
36V, 220kHz to 2.2MHz, 2A/3A Fully Integrated Step-Down Converters with 15µA Operating Current |
MAXIM - Dallas Semiconductor |
| 1016 |
MAX20002ATPA/V+ |
36V, 220kHz to 2.2MHz, 2A/3A Fully Integrated Step-Down Converters with 15µA Operating Current |
MAXIM - Dallas Semiconductor |
| 1017 |
MAX20002ATPA/V+C2 |
36V, 220kHz to 2.2MHz, 2A/3A Fully Integrated Step-Down Converters with 15µA Operating Current |
MAXIM - Dallas Semiconductor |
| 1018 |
MAX20002ATPA/V+T |
36V, 220kHz to 2.2MHz, 2A/3A Fully Integrated Step-Down Converters with 15µA Operating Current |
MAXIM - Dallas Semiconductor |
| 1019 |
MAX20002ATPA/V+TC2 |
36V, 220kHz to 2.2MHz, 2A/3A Fully Integrated Step-Down Converters with 15µA Operating Current |
MAXIM - Dallas Semiconductor |
| 1020 |
MAX20002ATPB/V+ |
36V, 220kHz to 2.2MHz, 2A/3A Fully Integrated Step-Down Converters with 15µA Operating Current |
MAXIM - Dallas Semiconductor |
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