| No. |
Part Name |
Description |
Manufacturer |
| 9991 |
GT60M303 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 9992 |
GT60M324 |
IGBT for soft switching applications |
TOSHIBA |
| 9993 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
| 9994 |
GT60PR21 |
IGBT for soft switching applications |
TOSHIBA |
| 9995 |
GT80J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N .CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 9996 |
GT80J101A |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 9997 |
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 9998 |
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 9999 |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10000 |
GT8G132 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10001 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10002 |
GT8J101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10003 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10004 |
GT8J102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10005 |
GT8J102SM |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 10006 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10007 |
GT8Q101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10008 |
GT8Q102 |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 10009 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10010 |
GT8Q102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 10011 |
GT8Q102SM |
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
| 10012 |
GWIXP425ABT |
Optimized for Broadband Applications |
Intel |
| 10013 |
GWIXP425ACT |
Optimized for Broadband Applications |
Intel |
| 10014 |
GWIXP425ADT |
Optimized for Broadband Applications |
Intel |
| 10015 |
GWX-15 |
Miniature size for high density applications |
etc |
| 10016 |
GWX-26 |
Miniature size for high density applications |
etc |
| 10017 |
GWX-26/A |
Miniature size for high density applications |
etc |
| 10018 |
GWX-38 |
Miniature size for high density applications |
etc |
| 10019 |
HA22032T |
GaAs MMIC Down Converter for Micro Wave Application |
Hitachi Semiconductor |
| 10020 |
HA22033 |
GaAs MMIC Low Noise Amplifier for Micro Wave Application |
Hitachi Semiconductor |
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