| No. |
Part Name |
Description |
Manufacturer |
| 9991 |
1S61 510 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
| 9992 |
1S61 550 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
| 9993 |
1S61 560 |
Hybrid, Tracking Resolver-to-Digital Converters |
Analog Devices |
| 9994 |
1S6100A |
Silicon power zener diode 100V, ±5% tolerance |
Texas Instruments |
| 9995 |
1S6100R |
Silicon power zener diode 100V, reverse polarity |
Texas Instruments |
| 9996 |
1S6110A |
Silicon power zener diode 110V, ±5% tolerance |
Texas Instruments |
| 9997 |
1S6110R |
Silicon power zener diode 110V, reverse polarity |
Texas Instruments |
| 9998 |
1S6120A |
Silicon power zener diode 120V, ±5% tolerance |
Texas Instruments |
| 9999 |
1S6120R |
Silicon power zener diode 120V, reverse polarity |
Texas Instruments |
| 10000 |
1S6130A |
Silicon power zener diode 130V, ±5% tolerance |
Texas Instruments |
| 10001 |
1S6130R |
Silicon power zener diode 130V, reverse polarity |
Texas Instruments |
| 10002 |
1S6150A |
Silicon power zener diode 150V, ±5% tolerance |
Texas Instruments |
| 10003 |
1S6150R |
Silicon power zener diode 150V, reverse polarity |
Texas Instruments |
| 10004 |
1S6160A |
Silicon power zener diode 160V, ±5% tolerance |
Texas Instruments |
| 10005 |
1S6160R |
Silicon power zener diode 160V, reverse polarity |
Texas Instruments |
| 10006 |
1S6180A |
Silicon power zener diode 180V, ±5% tolerance |
Texas Instruments |
| 10007 |
1S6180R |
Silicon power zener diode 180V, reverse polarity |
Texas Instruments |
| 10008 |
1S6200A |
Silicon power zener diode 200V, ±5% tolerance |
Texas Instruments |
| 10009 |
1S6200R |
Silicon power zener diode 200V, reverse polarity |
Texas Instruments |
| 10010 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 10011 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 10012 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 10013 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 10014 |
1S73 |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
| 10015 |
1S73A |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
| 10016 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 10017 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 10018 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 10019 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 10020 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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