| No. |
Part Name |
Description |
Manufacturer |
| 1 |
101S2AX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 2 |
101S2AX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 3 |
101S2EX0 |
Selenium Contact Protector Rectifiers, DC applications - 10 breaks/second max |
ITT Semiconductors |
| 4 |
101S2EX1 |
Selenium Contact Protector Rectifiers, DC applications - 40 breaks/second max |
ITT Semiconductors |
| 5 |
1S2 |
TECHNICAL SPECIFICTIONS OF SCHOTTKY BARRIER RECTIFIER |
DC Components |
| 6 |
1S2 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 7 |
1S20 |
1.0 AMP SCHOTTKY BARRIER RECTIFIERS |
Formosa MS |
| 8 |
1S20 |
1.0 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 9 |
1S20 |
SCHOTTKY BARRIER RECTIFIER |
Rectron Semiconductor |
| 10 |
1S200 |
Schottky Diode |
Rectron Semiconductor |
| 11 |
1S2074 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 12 |
1S2074 |
Diodes>Switching |
Renesas |
| 13 |
1S2074(H) |
Small Signal |
Hitachi Semiconductor |
| 14 |
1S2074H |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 15 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 16 |
1S2075 |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 17 |
1S2075 |
Diodes>Switching |
Renesas |
| 18 |
1S2075(K) |
Small Signal |
Hitachi Semiconductor |
| 19 |
1S2075K |
Silicon Epitaxial Planar Diode for High Speed Switching |
Hitachi Semiconductor |
| 20 |
1S2076 |
Small Signal |
Hitachi Semiconductor |
| 21 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 22 |
1S2076 |
Diodes>Switching |
Renesas |
| 23 |
1S2076A |
Small Signal |
Hitachi Semiconductor |
| 24 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 25 |
1S2076A |
Diodes>Switching |
Renesas |
| 26 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 27 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 28 |
1S2092 |
Silicon epitaxial planar type diode. |
Panasonic |
| 29 |
1S2092 |
SILICON EPTAXIAL PLANAR TYPE |
TOSHIBA |
| 30 |
1S2093 |
Silicon planar type trigger diode. |
Panasonic |
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