| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF6610 |
HEXFET Power MOSFET Silicon Technology with the advanced DirectFETTM |
International Rectifier |
| 2 |
IRF6610TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. |
International Rectifier |
| 3 |
IRF6611 |
DirectFET Power MOSFET |
International Rectifier |
| 4 |
IRF6611TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 5 |
IRF6611TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 6 |
IRF6612 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 7 |
IRF6612TR1 |
HEXFET Power MOSFET |
International Rectifier |
| 8 |
IRF6612TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 136 amperes. |
International Rectifier |
| 9 |
IRF6613 |
HEXFET Power MOSFET |
International Rectifier |
| 10 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 11 |
IRF6614 |
DirectFET Power MOSFET |
International Rectifier |
| 12 |
IRF6614TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
| 13 |
IRF6616 |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 14 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 15 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 16 |
IRF6617 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 17 |
IRF6617TR1 |
HEXFET Power MOSFET |
International Rectifier |
| 18 |
IRF6617TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes. |
International Rectifier |
| 19 |
IRF6618 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 20 |
IRF6618TR1 |
30V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 21 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 22 |
IRF6619 |
DirectFET Power MOSFET |
International Rectifier |
| 23 |
IRF6619TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 24 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 25 |
K4F661612B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 26 |
K4F661612B-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 27 |
K4F661612B-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 28 |
K4F661612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 29 |
K4F661612B-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 30 |
K4F661612B-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
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