| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AN1194 |
SOFTWARE DRIVERS FOR THE M29F512B AND M29W512B FLASH MEMORIES |
SGS Thomson Microelectronics |
| 2 |
ATV02W510-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=51V, Tolerance=5% |
Comchip Technology |
| 3 |
ATV02W510B-HF |
Halogen Free Transient Voltage Suppressor (TVS) Diodes, PPPM=200Watts, VRWM=51V, Tolerance=5% |
Comchip Technology |
| 4 |
BDW51 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 5 |
BDW51 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 6 |
BDW51A |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 7 |
BDW51A |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 8 |
BDW51A |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 9 |
BDW51B |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 10 |
BDW51B |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 11 |
BDW51B |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 12 |
BDW51C |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 13 |
BDW51C |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 14 |
BDW51C |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 15 |
BUW51 |
NPN MULTI-EPITAXIAL POWER TRANSISTOR |
SemeLAB |
| 16 |
BYW51 |
16A 200V Ultrafast Rectifier |
ON Semiconductor |
| 17 |
BYW51 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
| 18 |
BYW51 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
| 19 |
BYW51-100 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 100V. |
General Electric Solid State |
| 20 |
BYW51-100 |
8A/ 100V - 200V Ultrafast Dual Diodes |
Intersil |
| 21 |
BYW51-150 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 150V. |
General Electric Solid State |
| 22 |
BYW51-150 |
8A/ 100V - 200V Ultrafast Dual Diodes |
Intersil |
| 23 |
BYW51-200 |
Dual 8A, high-speed, high efficiency epitaxial silicon rectifier. Vrrm 200V. |
General Electric Solid State |
| 24 |
BYW51-200 |
8A/ 100V - 200V Ultrafast Dual Diodes |
Intersil |
| 25 |
BYW51-200 |
16A 200V Ultrafast Rectifier |
ON Semiconductor |
| 26 |
BYW51-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
| 27 |
BYW51-200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
| 28 |
BYW51200 |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
| 29 |
BYW51F |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
SGS Thomson Microelectronics |
| 30 |
BYW51F |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES |
ST Microelectronics |
| | | |
