| No. |
Part Name |
Description |
Manufacturer |
| 31 |
24FC65 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC65 |
Microchip |
| 32 |
24LC21 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 is a 128 x 8-bit Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of toda |
Microchip |
| 33 |
24LC21-I/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 34 |
24LC21-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 35 |
24LC21/P |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 36 |
24LC21/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 37 |
24LC21T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 38 |
24LC21T/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 39 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
| 40 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
| 41 |
29C516E |
16-Bit Flow Through EDAC Error Detection And Correction unit |
Atmel |
| 42 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 43 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 44 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 45 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 46 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 47 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 48 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 49 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 50 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 51 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
| 52 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 53 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 54 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 55 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 56 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 57 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 58 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 59 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 60 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
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