No. |
Part Name |
Description |
Manufacturer |
61 |
10MC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
62 |
10MD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
63 |
10NC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
64 |
10ND11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
65 |
10RIF120W |
V(rrm): 1200V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
66 |
10RM120 |
High Voltage silicon rectifier 12kV |
SESCOSEM |
67 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
68 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
69 |
120NQ035 |
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
70 |
120NQ040 |
40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
71 |
120NQ045 |
45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
72 |
120NQ045R |
45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
73 |
1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor |
GHz Technology |
74 |
1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor |
GHz Technology |
75 |
1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor |
GHz Technology |
76 |
121NQ035 |
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
77 |
121NQ040 |
40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
78 |
121NQ045 |
45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
79 |
121NQ045R |
45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
80 |
122NQ030 |
30V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
81 |
122NQ030R |
30V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
82 |
123NQ080 |
80V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
83 |
123NQ100 |
100V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
84 |
123NQ100R |
100V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
85 |
1241CBU |
OC-12/STM-4 uncooled laser transmitter. Average output power (dBM): -15(min),-11(typ),-8(max). Center wavelengrh(nm): 1274(min),1356(max). Connector SC. |
Agere Systems |
86 |
125NQ015 |
15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
87 |
125NQ015R |
15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package |
International Rectifier |
88 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
89 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
90 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| | | |