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Datasheets for 12

Datasheets found :: 63702
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No. Part Name Description Manufacturer
61 10MC11 General-Purpose silicon rectifier 12A TOSHIBA
62 10MD11 General-Purpose silicon rectifier 12A TOSHIBA
63 10NC11 General-Purpose silicon rectifier 12A TOSHIBA
64 10ND11 General-Purpose silicon rectifier 12A TOSHIBA
65 10RIF120W V(rrm): 1200V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers International Rectifier
66 10RM120 High Voltage silicon rectifier 12kV SESCOSEM
67 10SI12 Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V IPRS Baneasa
68 10SI12R Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V IPRS Baneasa
69 120NQ035 35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
70 120NQ040 40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
71 120NQ045 45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
72 120NQ045R 45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
73 1214-30 30 W, 28 V, 1200-1400 MHz common base transistor GHz Technology
74 1214-300 300 W, 50 V, 1200-1400 MHz common base transistor GHz Technology
75 1214-55 55 W, 28 V, 1200-1400 MHz common base transistor GHz Technology
76 121NQ035 35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
77 121NQ040 40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
78 121NQ045 45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
79 121NQ045R 45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
80 122NQ030 30V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
81 122NQ030R 30V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
82 123NQ080 80V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
83 123NQ100 100V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
84 123NQ100R 100V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
85 1241CBU OC-12/STM-4 uncooled laser transmitter. Average output power (dBM): -15(min),-11(typ),-8(max). Center wavelengrh(nm): 1274(min),1356(max). Connector SC. Agere Systems
86 125NQ015 15V 120A Schottky Discrete Diode in a D-67 HALF-Pak package International Rectifier
87 125NQ015R 15V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package International Rectifier
88 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
89 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
90 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic


Datasheets found :: 63702
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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