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Datasheets for 2N65

Datasheets found :: 328
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N6516 Leaded Small Signal Transistor General Purpose Central Semiconductor
62 2N6516 0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
63 2N6516 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
64 2N6516 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
65 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
66 2N6517 Leaded Small Signal Transistor General Purpose Central Semiconductor
67 2N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
68 2N6517 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
69 2N6517 Ic=500mA, Vce=10V transistor MCC
70 2N6517 High Voltage Transistor 625mW Micro Commercial Components
71 2N6517 High Voltage Transistors ON Semiconductor
72 2N6517 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
73 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
74 2N6517 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Zetex Semiconductors
75 2N6517BU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
76 2N6517CBU NPN Epitaxial Silicon Transistor Fairchild Semiconductor
77 2N6517CTA NPN Epitaxial Silicon Transistor Fairchild Semiconductor
78 2N6517RLRA High Voltage Transistors ON Semiconductor
79 2N6517RLRP High Voltage Transistors ON Semiconductor
80 2N6517TA NPN Epitaxial Silicon Transistor Fairchild Semiconductor
81 2N6518 Leaded Small Signal Transistor General Purpose Central Semiconductor
82 2N6518 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
83 2N6518 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
84 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
85 2N6518BU PNP Epitaxial Silicon Transistor Fairchild Semiconductor
86 2N6518TA PNP Epitaxial Silicon Transistor Fairchild Semiconductor
87 2N6519 Leaded Small Signal Transistor General Purpose Central Semiconductor
88 2N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE Continental Device India Limited
89 2N6519 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
90 2N6519 Ic=500mA, Vce=10V transistor MCC


Datasheets found :: 328
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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