No. |
Part Name |
Description |
Manufacturer |
181 |
2N6546 |
15A NPN Silicon 175W power transistor SWITCHMODE series |
Motorola |
182 |
2N6546 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
183 |
2N6546 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
184 |
2N6546 |
MULTIEPITAXIAL MESA NPN |
SGS Thomson Microelectronics |
185 |
2N6546 |
MULTIEPITAXIAL MESA NPN |
ST Microelectronics |
186 |
2N6546 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
187 |
2N6547 |
SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
188 |
2N6547 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
189 |
2N6547 |
NPN Transistor |
Microsemi |
190 |
2N6547 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
191 |
2N6547 |
15A NPN Silicon 175W power transistor SWITCHMODE series |
Motorola |
192 |
2N6547 |
Trans GP BJT NPN 400V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
193 |
2N6547 |
NPN SILICON POWER TRANSISTORS |
ON Semiconductor |
194 |
2N6547 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
195 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
196 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
197 |
2N6547 |
Silicon NPN triple diffused power transistor |
TOSHIBA |
198 |
2N6547-D |
SWITCHMODE Series NPN Silicon Power Transistors |
ON Semiconductor |
199 |
2N6548 |
Leaded Power Transistor Darlington |
Central Semiconductor |
200 |
2N6549 |
Leaded Power Transistor Darlington |
Central Semiconductor |
201 |
2N6549 |
Trans Darlington NPN 40V 2A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
202 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
203 |
2N655 |
Germanium PNP Transistor |
Motorola |
204 |
2N655 |
Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 |
New Jersey Semiconductor |
205 |
2N6550 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
206 |
2N6550 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
207 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
208 |
2N6551 |
Trans GP BJT NPN 60V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
209 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
210 |
2N6552 |
Trans GP BJT NPN 80V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
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