No. |
Part Name |
Description |
Manufacturer |
61 |
2N6516 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
62 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
63 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
64 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
65 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
66 |
2N6517 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
67 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
68 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
69 |
2N6517 |
Ic=500mA, Vce=10V transistor |
MCC |
70 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
71 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
72 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
73 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
74 |
2N6517 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
75 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
76 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
77 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
78 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
79 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
80 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
81 |
2N6518 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
82 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
83 |
2N6518 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
84 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
85 |
2N6518BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
86 |
2N6518TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
87 |
2N6519 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
88 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
89 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
90 |
2N6519 |
Ic=500mA, Vce=10V transistor |
MCC |
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