| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 2 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 4 |
2N4398 |
-40 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
| 5 |
2N4399 |
-60 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
| 6 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 7 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 8 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 9 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 10 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 11 |
2SA2126 |
Bipolar Transistor -50V -3A VCE(sat);-270mV max. PNP Single TP/TP-FA |
ON Semiconductor |
| 12 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 13 |
2SAR512P5 |
PNP -30V -2A Medium Power Transistor |
ROHM |
| 14 |
2SAR512P5T100 |
PNP -30V -2A Medium Power Transistor |
ROHM |
| 15 |
2SAR533P5 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 16 |
2SAR533P5T100 |
PNP -50V -3A Medium Power Transistor |
ROHM |
| 17 |
2SAR552P5 |
PNP -30V -3A Medium Power Transistor |
ROHM |
| 18 |
2SAR552P5 |
PNP -30V -3A Medium Power Transistor |
ROHM |
| 19 |
2SAR552P5T100 |
PNP -30V -3A Medium Power Transistor |
ROHM |
| 20 |
2SAR552P5T100 |
PNP -30V -3A Medium Power Transistor |
ROHM |
| 21 |
2SB1185 |
Power Transistor (-60V/ -3A) |
ROHM |
| 22 |
2SB1314 |
2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 23 |
2SB1370 |
Power Transistor (-60V/ -3A) |
ROHM |
| 24 |
2SB1565 |
Power Transistor (-60V/ -3A) |
ROHM |
| 25 |
2SB1566 |
Power Transistor (-50V/ -3A) |
ROHM |
| 26 |
2SB1639 |
High-current gain Power Transistor (-60V/ -3A) |
ROHM |
| 27 |
2SB1655 |
Power Transistor (-60V/ -3A) |
ROHM |
| 28 |
2SB1708Q5 |
PNP Low V<sub>CE(sat)</sub> Transistor (-30V / -3A) |
ROHM |
| 29 |
2SB1708Q5TL |
PNP Low V<sub>CE(sat)</sub> Transistor (-30V / -3A) |
ROHM |
| 30 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
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