| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AF4935PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 62 |
AF4935PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 63 |
AF4953PS |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 64 |
AF4953PSA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 65 |
AF4953PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 66 |
AF4953PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 67 |
ATP102 |
P-Channel Power MOSFET, -30V, -40A, 18.5mOhm, Single ATPAK |
ON Semiconductor |
| 68 |
ATP104 |
P-Channel Power MOSFET, -30V, -75A, 8.4mOhm, Single ATPAK |
ON Semiconductor |
| 69 |
AUIRF7316Q |
Automotive Q101 -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 70 |
AUIRF7316QTR |
Automotive Q101 -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 71 |
AUIRF7416Q |
Automotive Q101 -30V Single P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 72 |
AUIRF7416QTR |
Automotive Q101 -30V Single P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 73 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 74 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 75 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 76 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 77 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 78 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 79 |
BC559 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 80 |
BSL307SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, TSOP-6 |
Infineon |
| 81 |
BSO080P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 8m |
Infineon |
| 82 |
BSO130P03S |
OptiMOS MOSFET, -30V, SO-8, Ron =13mW, 11.3A, LL |
Infineon |
| 83 |
BSO200P03S |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8, Ron = 20m |
Infineon |
| 84 |
BSO301SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8 |
Infineon |
| 85 |
BSO303P |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8 |
Infineon |
| 86 |
BSO303SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -30V, SO-8 |
Infineon |
| 87 |
CPH3106 |
Bipolar Transistor, -12V, -3A, Low VCE(sat), PNP Single CPH3 |
ON Semiconductor |
| 88 |
CPH3122 |
Bipolar Transistor, -30V, -3A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
| 89 |
CPH3122 |
Bipolar Transistor, -30V, -3A, Low VCE(sat) PNP Single CPH3 |
ON Semiconductor |
| 90 |
CPH3348 |
P-Channel Power MOSFET, -12V, -3A, 70mOhm, Single CPH3 |
ON Semiconductor |
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