| No. |
Part Name |
Description |
Manufacturer |
| 151 |
FDFMA3P029Z |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3.3A, 87mOhms |
Fairchild Semiconductor |
| 152 |
FDFMA3P029Z |
Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3.3A, 87mOhms |
Fairchild Semiconductor |
| 153 |
FDMA1027PT |
Dual P-Channel PowerTrench® MOSFET -20A, -3A, 120mOhms |
Fairchild Semiconductor |
| 154 |
FQD4P25TM_WS |
P-Channel QFET� MOSFET -250V, -3.1A, 2.1? |
Fairchild Semiconductor |
| 155 |
FR3A |
FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT -3.0 Amperes |
Surge Components |
| 156 |
FR3B |
FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT -3.0 Amperes |
Surge Components |
| 157 |
FR3D |
FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT -3.0 Amperes |
Surge Components |
| 158 |
FR3G |
FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT -3.0 Amperes |
Surge Components |
| 159 |
FR3J |
FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT -3.0 Amperes |
Surge Components |
| 160 |
FR3K |
FAST SWITCHING SURFACE MOUNT RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT -3.0 Amperes |
Surge Components |
| 161 |
GES2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 162 |
GES2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 163 |
GES2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 164 |
GES2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 165 |
IRF7316G |
Halogen Free and Lead Free -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 166 |
IRF7316GTRPBF |
Halogen Free and Lead Free -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 167 |
IRF7406G |
Halogen Free and Lead Free -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 168 |
IRF7406GTRPBF |
Halogen Free and Lead Free -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 169 |
IRF9383M |
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. |
International Rectifier |
| 170 |
IRF9383MTR1PBF |
A -30V Single P-Channel HEXFET Power MOSFET in a DirectFET MX package rated at -160 amperes optimized with low on resistance. |
International Rectifier |
| 171 |
IRF9395M |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 172 |
IRF9395MTR1PBF |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 173 |
IRF9395MTRPBF |
A -30V Dual P-Channel HEXFET Power MOSFET in a DirectFET MC package rated at -14 amperes optimized with low on resistance |
International Rectifier |
| 174 |
KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory |
Samsung Electronic |
| 175 |
KSA614 |
-80 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 176 |
KSB1149 |
-100 V, -3 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
| 177 |
KSB1150 |
-60 V, -3 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
| 178 |
KSB744 |
-70 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 179 |
KSB744A |
-70 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 180 |
LB1264 |
V(out): -03 to +11V; V(in): -35 to +9V; V(dc)max: -0.3 to +9V; 150mA; 650mW; Sanyo microchip |
SANYO |
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