DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 143

Datasheets found :: 128
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1.5FMCJ130 Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 117V(min), 143V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
2 1.5FMCJ150A Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 143V(min), 158V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
3 1.5KE130 117- 143V transient voltage suppressor DC Components
4 1.5KE130 GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 117V(min), 143V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
5 1.5KE130C Transient voltage suppressor. 1500 W. Breakdown voltage 117.0 V(min), 143 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
6 1.5KE150A GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 143V(min), 158V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
7 1.5KE150CA Transient voltage suppressor. 1500 W. Breakdown voltage 143.0 V(min), 158.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
8 1415-2 2 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
9 1415-7 7 W, 20 V, 1430-1540 MHz common base transistor GHz Technology
10 1430G5 NetLight 1430G5 Type SONET/SDH Long-Reach Transceivers with Clock Recovery Agere Systems
11 1430G5LL NetLight 1430G5 Type SONET/SDH Long-Reach Transceivers with Clock Recovery Agere Systems
12 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
13 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
14 A43L0616AV-5.5 5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM AMIC Technology
15 A43L2616V-7PH Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM AMIC Technology
16 A43L8316AV-7 Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM AMIC Technology
17 AD004T2-00 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
18 AD004T2-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
19 AE002M2-29 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
20 AE002M4-05 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
21 AF002C1-32 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
22 AH002R2-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
23 AK002D2-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
24 AK002D4-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
25 AK002D4-31 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
26 AK002M4-00 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
27 AK002M4-31 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
28 AK004L1-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
29 AK004M1-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc
30 AK004M2-11 GaAs MMIC Control FET in SOT 143 DC-2.5 GHz Alpha Industries Inc


Datasheets found :: 128
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com