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Datasheets for 143

Datasheets found :: 128
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No. Part Name Description Manufacturer
91 HM5425801BTT-75B 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank Elpida Memory
92 HY57V161610ETP-7I 2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
93 HY57V281620ALT-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
94 HY57V281620AT-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
95 HY57V281620HCLT-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
96 HY57V281620HCLT-7I 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
97 HY57V281620HCLTP-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
98 HY57V281620HCST-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
99 HY57V281620HCST-7I 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
100 HY57V281620HCSTP-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
101 HY57V281620HCT-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
102 HY57V281620HCT-7I 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
103 HY57V281620HCTP-7 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz Hynix Semiconductor
104 HY57V641620HGLT-7 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz Hynix Semiconductor
105 HY57V641620HGLT-7I 4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz Hynix Semiconductor
106 HY57V658020BTC-7I 4Mbit x 2 bank x 8 SDRAM, LVTTL, 143MHz Hynix Semiconductor
107 K4S641632C-TC70 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Samsung Electronic
108 K4S641632C-TL70 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Samsung Electronic
109 K4S643232H-TL70 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 143MHz Samsung Electronic
110 KM416S4030CT-G7 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz Samsung Electronic
111 KM48S8030CT-G_F7 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz Samsung Electronic
112 NTE5250AK 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 8.7V. Zener test current Izt = 1435mA. NTE Electronics
113 P4KE130C Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
114 P4KE150A Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
115 P4KE150CA Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
116 P6KE130C Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 117.0 V, Vbr(max) = 143 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
117 P6KE150CA Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 143.0 V, Vbr(max) = 158 V. Test current It = 1.0 mA. Shanghai Sunrise Electronics
118 ST333C04CFL0 400V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package International Rectifier
119 ST333C04CFM0 400V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package International Rectifier
120 ST333C08CFL0 800V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package International Rectifier


Datasheets found :: 128
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