No. |
Part Name |
Description |
Manufacturer |
91 |
HM5425801BTT-75B |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword � 16-bit � 4-bank/8-Mword � 8-bit � 4-bank/ 16-Mword � 4-bit � 4-bank |
Elpida Memory |
92 |
HY57V161610ETP-7I |
2 banks x 512K x 16 bit synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
93 |
HY57V281620ALT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
94 |
HY57V281620AT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
95 |
HY57V281620HCLT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
96 |
HY57V281620HCLT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
97 |
HY57V281620HCLTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
98 |
HY57V281620HCST-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
99 |
HY57V281620HCST-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
100 |
HY57V281620HCSTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
101 |
HY57V281620HCT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
102 |
HY57V281620HCT-7I |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
103 |
HY57V281620HCTP-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
104 |
HY57V641620HGLT-7 |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz |
Hynix Semiconductor |
105 |
HY57V641620HGLT-7I |
4 banks x 1M x 16Bit synchronous DRAM, 3.3V, LVTTL, low power, 143 MHz |
Hynix Semiconductor |
106 |
HY57V658020BTC-7I |
4Mbit x 2 bank x 8 SDRAM, LVTTL, 143MHz |
Hynix Semiconductor |
107 |
K4S641632C-TC70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
108 |
K4S641632C-TL70 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
109 |
K4S643232H-TL70 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 143MHz |
Samsung Electronic |
110 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
111 |
KM48S8030CT-G_F7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz |
Samsung Electronic |
112 |
NTE5250AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 8.7V. Zener test current Izt = 1435mA. |
NTE Electronics |
113 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
114 |
P4KE150A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
115 |
P4KE150CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
116 |
P6KE130C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 117.0 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
117 |
P6KE150CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 143.0 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
118 |
ST333C04CFL0 |
400V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package |
International Rectifier |
119 |
ST333C04CFM0 |
400V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package |
International Rectifier |
120 |
ST333C08CFL0 |
800V 1435A Inverter Thyristor in a TO-200AB (E-Puk) package |
International Rectifier |
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