| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP160 |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
| 2 |
15KP160A |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 3 |
15KP160C |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
| 4 |
15KP160CA |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A. |
Panjit International Inc |
| 5 |
1M160ZS1 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. |
Motorola |
| 6 |
1M160ZS2 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. |
Motorola |
| 7 |
1M160ZS5 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance. |
Motorola |
| 8 |
1N5277AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-10%. |
Microsemi |
| 9 |
1N5277BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-5%. |
Microsemi |
| 10 |
1N5277UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. |
Microsemi |
| 11 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 12 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 13 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 14 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 15 |
1SMB5954A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 160 V. +-10% tolerance. |
Motorola |
| 16 |
1SMB5954B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 160 V. +-5% tolerance. |
Motorola |
| 17 |
1SMC5384 |
Surface mount silicon zener diode. Power 5.0 Watts. Nominal zener voltage Vz = 160 V. Test current Izt = 8 mA. |
Panjit International Inc |
| 18 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 19 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 20 |
2N5551HRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 21 |
2N5551RHRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 22 |
2N5551RHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 23 |
2N5551RUBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 24 |
2N5551RUBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 25 |
2N5551SHRT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 26 |
2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 27 |
2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 28 |
2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 29 |
3EZ160D |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 30 |
3EZ160D1 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
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