| No. |
Part Name |
Description |
Manufacturer |
| 31 |
3EZ160D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. |
Motorola |
| 32 |
3EZ160D10 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 33 |
3EZ160D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 10% tolerance. |
Motorola |
| 34 |
3EZ160D2 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 35 |
3EZ160D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. |
Motorola |
| 36 |
3EZ160D3 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 37 |
3EZ160D4 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 38 |
3EZ160D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. |
Motorola |
| 39 |
BZX55_C160 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 160 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 40 |
CZRC5384B |
5.0 watt surface mount zener diode. Nom zener voltage 160 V. Tolerance +-5 %. |
Comchip Technology |
| 41 |
J2N5551UB1 |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 42 |
JANS2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 43 |
JANS2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 44 |
JANSR2N5551UBG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 45 |
JANSR2N5551UBT |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 46 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 47 |
MKP 1837 |
C-values 0.01 µF - 0.1 µF, Voltage 160 VDC, Tolerances to 1%, Low losses, PCM 5 |
Vishay |
| 48 |
MZT3012 |
10 watt zener transient suppressor. Nom zener voltage 160 V. |
Motorola |
| 49 |
MZT3347 |
50 watt zener transient suppressor. Nom zener voltage 160 V. |
Motorola |
| 50 |
P4KE160C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 51 |
P4KE160CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 52 |
P6KE160C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 53 |
P6KE160CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 54 |
SBR200-16JS |
Dual 160 V, 20 mA Schottky Barrier Rectifiers, Common Cathode |
ON Semiconductor |
| 55 |
SMAJ160 |
Surface mount transient voltage suppressor. Reverse stand-off voltage VRWM = 160 V. Test current IT = 1 mA. |
Bytes |
| 56 |
SMAJ160A |
Surface mount transient voltage suppressor. Reverse stand-off voltage VRWM = 160 V. Test current IT = 1 mA. |
Bytes |
| 57 |
SMAJ160C |
Surface mount transient voltage suppressor. Reverse stand-off voltage VRWM = 160 V. Test current IT = 1 mA. |
Bytes |
| 58 |
SMAJ160C |
400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
| 59 |
SMAJ160CA |
Surface mount transient voltage suppressor. Reverse stand-off voltage VRWM = 160 V. Test current IT = 1 mA. |
Bytes |
| 60 |
SMAJ160CA |
400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional. |
Jinan Gude Electronic Device |
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