| No. |
Part Name |
Description |
Manufacturer |
| 1 |
066302.5HXLL |
LT-5 tm time lag fuse. Long lead (bulk) 100 pieces. Ampere rating 2.50, voltage rating 250, nominal resistance cold ohms 20. |
Littelfuse |
| 2 |
066302.5HXSL |
LT-5 tm time lag fuse. Short lead (bulk) 100 pieces. Ampere rating 2.50, voltage rating 250, nominal resistance cold ohms 20. |
Littelfuse |
| 3 |
066302.5ZRLL |
LT-5 tm time lag fuse. Long lead (tape and reel) 750 pieces. Ampere rating 2.50, voltage rating 250, nominal resistance cold ohms 20. |
Littelfuse |
| 4 |
1N4747 |
20.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 5 |
1N4747 |
1 W silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 6 |
1N4747A |
20.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 7 |
1N5144A |
Diode VAR Cap Single 60V 20.9pF 2-Pin DO-7 |
New Jersey Semiconductor |
| 8 |
1N5250 |
500 mW silicon zener diode. Nominal zener voltage 20.0 V. |
Fairchild Semiconductor |
| 9 |
1N5250B |
20.0V 500 mW Zener Diode |
Continental Device India Limited |
| 10 |
1N5540A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 11 |
1N5540B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 12 |
1N5642A |
Diode TVS Single Uni-Dir 20.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 13 |
1N5931 |
1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 14 |
1N5931A |
1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 15 |
1N5931C |
1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 16 |
1N5931D |
1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 17 |
1N6116 |
Diode TVS Single Bi-Dir 20.6V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 18 |
1N6116A |
Diode TVS Single Bi-Dir 20.6V 500W 2-Pin |
New Jersey Semiconductor |
| 19 |
1N6152 |
Diode TVS Single Bi-Dir 20.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 20 |
1N6152A |
Diode TVS Single Bi-Dir 20.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 21 |
1N6280A |
Diode TVS Single Uni-Dir 20.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 22 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 23 |
1N968 |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 24 |
1N968 |
500 mW silicon planar zener diode. Max zener voltage 20.0 V. |
Fairchild Semiconductor |
| 25 |
1N968A |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 26 |
1N968B |
20.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 27 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 28 |
APT10050JN |
POWER MOS IV 1000V 20.5A 0.50 Ohm |
Advanced Power Technology |
| 29 |
BCR402R |
Analog Silicon SSICs - output current: 20..60mA |
Infineon |
| 30 |
BD157 |
20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
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