| No. |
Part Name |
Description |
Manufacturer |
| 31 |
BD158 |
20.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 32 |
BD159 |
20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
| 33 |
BD165 |
20.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD166 |
Continental Device India Limited |
| 34 |
BD166 |
20.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 hFE. Complementary BD165 |
Continental Device India Limited |
| 35 |
BD167 |
20.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD168 |
Continental Device India Limited |
| 36 |
BD168 |
20.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 hFE. Complementary BD167 |
Continental Device India Limited |
| 37 |
BD169 |
20.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD170 |
Continental Device India Limited |
| 38 |
BD170 |
20.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 hFE. Complementary BD169 |
Continental Device India Limited |
| 39 |
BGD104E |
CATV power-doubler amplifier module 20.0dB gain operating at frequencies up to 450MHz |
Philips |
| 40 |
BGD714 |
750 MHz, 20.3 dB gain power doubler amplifier |
NXP Semiconductors |
| 41 |
BGD714 |
750 MHz, 20.3 dB gain power doubler amplifier |
Philips |
| 42 |
BUK7M20-40H |
N-channel 40 V, 20.0 mΩ standard level MOSFET in LFPAK33 |
Nexperia |
| 43 |
BUK9M20-40H |
N-channel 40 V, 20.0 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
| 44 |
BZW06-20 |
Diode TVS Single Uni-Dir 20.5V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
| 45 |
CLL5250A |
20.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 46 |
CLL5250B |
20.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 47 |
CLL968A |
20.0V General Purpose 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 48 |
CMBZ5250B |
20.0V 300mW SMD Dual Zener Diode |
Continental Device India Limited |
| 49 |
CMM-10 |
2.0 TO 20.0 GHz GAAS MMIC POWER AMPLIFIER |
CELERITEK |
| 50 |
CSA1220 |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSC2690 |
Continental Device India Limited |
| 51 |
CSA1220A |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 2.500A Ic, 60 - 320 hFE. Complementary CSC2690A |
Continental Device India Limited |
| 52 |
CSB649 |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 320 hFE. |
Continental Device India Limited |
| 53 |
CSB649A |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 200 hFE. |
Continental Device India Limited |
| 54 |
CSB649AB |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 55 |
CSB649AC |
20.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 56 |
CSB649B |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 57 |
CSB649C |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 100 - 200 hFE. |
Continental Device India Limited |
| 58 |
CSB649D |
20.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 1.500A Ic, 160 - 320 hFE. |
Continental Device India Limited |
| 59 |
CSC2690 |
20.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220 |
Continental Device India Limited |
| 60 |
CSC2690A |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.200A Ic, 60 - 320 hFE. Complementary CSA1220A |
Continental Device India Limited |
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