No. |
Part Name |
Description |
Manufacturer |
1 |
524V13 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
2 |
524V15 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
3 |
524V17 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
4 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
5 |
524V27 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
6 |
524V30 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
7 |
524V42 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
8 |
524V48 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
9 |
5LP01M |
P-Channel Small Signal MOSFET -50V, -0.07A, 23 Ohm, Single MCP |
ON Semiconductor |
10 |
AB-120 |
HOW TO GET 23 BITS OF EFFECTIVE RESOLUTION FROM YOUR 24-BIT CONVERTER |
Burr Brown |
11 |
AMMC-5023 |
AMMC-5023 · 23 GHz Low Noise Amplifier |
Agilent (Hewlett-Packard) |
12 |
BAS21LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
13 |
BAS4004LT1 |
CASE 318 08, STYLE 12 SOT 23 (TO 236AB) |
Motorola |
14 |
BAS70LT1 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB) |
Motorola |
15 |
BUK7K23-80E |
Dual N-channel 80 V, 23 mΩ standard level MOSFET |
Nexperia |
16 |
BUK9M23-80E |
N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
17 |
CGD1042H |
1 GHz, 23 dB gain high output power doubler |
NXP Semiconductors |
18 |
CGD1042L |
1 GHz, 23 dB gain GaAs low current power doubler |
NXP Semiconductors |
19 |
CGD942C |
870 MHz, 23 dB gain power doubler amplifier |
NXP Semiconductors |
20 |
CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler |
NXP Semiconductors |
21 |
CGY1043 |
1 GHz, 23 dB gain GaAs push-pull amplifier |
NXP Semiconductors |
22 |
EN6446 |
P-Channel Power MOSFET, -50V, -0.14A, 23 Ohm, Dual MCPH6 |
ON Semiconductor |
23 |
EN6619 |
P-Channel Small Signal MOSFET -50V, -0.07A, 23 Ohm, Single CP |
ON Semiconductor |
24 |
FAN8303 |
2 A 23 V Non-Synchronous Step-Down DC-DC Regulator |
Fairchild Semiconductor |
25 |
FMMT596 |
SOT 23 PNP silicon planar high voltage transistor |
Diodes |
26 |
FMMT596TA |
SOT 23 PNP silicon planar high voltage transistor |
Diodes |
27 |
HBC4730A |
Ajustable 23 stage freq. divider 0.5Hz out. |
SGS-ATES |
28 |
HBF4730A |
Ajustable 23 stage freq. divider 0.5Hz out. |
SGS-ATES |
29 |
HD2A-5D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
30 |
HD3A-4D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
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