| No. |
Part Name |
Description |
Manufacturer |
| 31 |
HD4A-7D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
| 32 |
HMC203 |
GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz |
Hittite Microwave Corporation |
| 33 |
HSH2501NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 34 |
HSH2510NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 35 |
IRF6728M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 36 |
IRF6728MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 37 |
IRF6728MTRPBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 38 |
IRF8306M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 39 |
IRF8306MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 40 |
MAX6018AEUR21-T |
Precision, micropower, 1.8 V supply, low-dropout, SOT 23 voltage reference |
MAXIM - Dallas Semiconductor |
| 41 |
MAX6033AAUT25-T |
2.500 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 42 |
MAX6033AAUT30-T |
3.000 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 43 |
MAX6033AAUT41-T |
4.096 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 44 |
MAX6033AAUT50-T |
5.000 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 45 |
MAX6033BAUT25-T |
2.500 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 46 |
MAX6033BAUT30-T |
3.000 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 47 |
MAX6033BAUT41-T |
4.096 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 48 |
MAX6033BAUT50-T |
5.000 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 49 |
MAX6033CAUT25-T |
2.500 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 50 |
MAX6033CAUT30-T |
3.000 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 51 |
MAX6033CAUT41-T |
4.096 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 52 |
MAX6033CAUT50-T |
5.000 V, Ultra-high-precision, SOT 23 series voltage reference |
MAXIM - Dallas Semiconductor |
| 53 |
MHVIC2114R2 |
2100 MHz, 27 V, 23 dBm Single W–CDMA RF LDMOS Wideband Integrated Power Amplifier |
Freescale (Motorola) |
| 54 |
MIC2288BD5 |
1A 1.2 MHZ PWM BOOST CONVERTER IN THIN SOT 23 AND 2 X MLF |
Micrel Semiconductor |
| 55 |
MIC2288BML |
1A 1.2 MHZ PWM BOOST CONVERTER IN THIN SOT 23 AND 2 X MLF |
Micrel Semiconductor |
| 56 |
MIC2288YD5 |
1A 1.2 MHZ PWM BOOST CONVERTER IN THIN SOT 23 AND 2 X MLF |
Micrel Semiconductor |
| 57 |
MIC2288YML |
1A 1.2 MHZ PWM BOOST CONVERTER IN THIN SOT 23 AND 2 X MLF |
Micrel Semiconductor |
| 58 |
MRF5S21100H |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
| 59 |
MRF5S21100HR3 |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| 60 |
MRF5S21100HSR3 |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
| | | |
