No. |
Part Name |
Description |
Manufacturer |
1 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
2 |
1504-300C |
Delay 300 +/-15 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
3 |
1504-300D |
Delay 300 +/-15 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
4 |
1504-300G |
Delay 300 +/-15 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
5 |
1505-300G |
Delay 300 +/-15 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
6 |
1507-300G |
Delay 300 +/-15 ns, 10-TAP SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
7 |
1N5403 |
3 AMPS, 300 Volts Silicon Rectifier |
ITT Semiconductors |
8 |
1N5621 |
800 V rectifier 1.5 A forward current, 300 ns recovery time |
Voltage Multipliers |
9 |
2020-300 |
Delay 300 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
10 |
2021-300 |
Delay 300 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
11 |
2075-300 |
Delay 300 +/-20 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
12 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
13 |
28LV256JC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
14 |
28LV256JI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
15 |
28LV256JI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
16 |
28LV256JM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
17 |
28LV256JM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
18 |
28LV256PC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
19 |
28LV256PC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
20 |
28LV256PI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
21 |
28LV256PI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
22 |
28LV256PM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
23 |
28LV256PM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
24 |
28LV256SC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
25 |
28LV256SC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
26 |
28LV256SI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
27 |
28LV256SI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
28 |
28LV256SM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
29 |
28LV256SM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
30 |
28LV256TC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
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