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Datasheets for 300

Datasheets found :: 1738
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No. Part Name Description Manufacturer
31 28LV256TC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
32 28LV256TI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
33 28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
34 28LV256TM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
35 28LV256TM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
36 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
37 2N3702 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE Continental Device India Limited
38 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
39 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
40 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
41 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
42 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
43 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
44 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
45 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
46 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
47 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
48 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
49 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
50 2N6676 NPN silicon power transistor. 15 A, 300 V, 175 W. Motorola
51 2N7002 60 V, 300 mA N-channel Trench MOSFET Nexperia
52 2N7002 60 V, 300 mA N-channel Trench MOSFET NXP Semiconductors
53 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Nexperia
54 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET NXP Semiconductors
55 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
56 2SB1035 900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 Isahaya Electronics Corporation
57 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation
58 2SC3244 900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 Isahaya Electronics Corporation
59 2SC3438 500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 Isahaya Electronics Corporation
60 2SC4357 500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. Isahaya Electronics Corporation


Datasheets found :: 1738
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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