No. |
Part Name |
Description |
Manufacturer |
1 |
2N5050 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
2 |
2N5051 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
3 |
2N5052 |
2A Medium-Power NPN Silicon Transistor 40W |
Motorola |
4 |
2N5641 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
5 |
2N5642 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
6 |
2N5643 |
NPN silicon RF power transistor 40W - 175MHz |
Motorola |
7 |
2N5643 |
7W / 20W / 40W, 28V, VHF POWER TRANSISTOR |
ST Microelectronics |
8 |
2N5849 |
NPN silicon RF power transistor 40W - 50MHz |
Motorola |
9 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
10 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
11 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
12 |
2N6084 |
NPN silicon RF power transistor 12.5V 40W 175MHz |
Motorola |
13 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
14 |
2N6121 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
15 |
2N6122 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
16 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
17 |
2N6124 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
18 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
19 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
20 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
21 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
22 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
23 |
2SB776 |
PNP Epitaxial Planar Silicon Transistor 100V/7A, AF 40W Output Applications |
SANYO |
24 |
2SC1077 |
Silicon NPN epitaxial planar transistor, VHF power amplifiers applications (high voltage), RF Wide-Band amplifiers 40W 175MHz |
TOSHIBA |
25 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
26 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
27 |
2SC3562 |
10A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
28 |
2SC3563 |
10A; 40W; V(ceo): 450V; NPN transistor. For switching regulation |
TOSHIBA |
29 |
2SC3625 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation |
TOSHIBA |
30 |
2SD896 |
NPN Triple Diffused Planar Silicon Transistor 100V/7A, AF 40W Output Applications |
SANYO |
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